kw.\*:("Aluminium additions")
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Thermal donor formation in aluminium doped siliconLINDSTRÖM, J. L; HALLBERG, T.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 150-153, issn 0921-5107Conference Paper
Precipitation process in a Mg-Gd-Y alloy grain-refined by Al additionJICHUN DAI; SUMING ZHU; EASTON, Mark A et al.Materials characterization. 2014, Vol 88, pp 7-14, issn 1044-5803, 8 p.Article
The influence of aluminium on the ferrite formation and microstructural development in hot rolled dual-phase steelMEIN, A; FOURLARIS, G; CROWTHER, D et al.Materials characterization. 2012, Vol 64, pp 69-78, issn 1044-5803, 10 p.Article
Two-dimensional aluminum diffusion in silicon : experimental results and simulationsGALVAGNO, G; LA VIA, F; SAGGIO, M. G et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 5, pp 1585-1590, issn 0013-4651Article
Study of the Structural Role of Gallium and Aluminum in 45S5 Bioactive Glasses by Molecular Dynamics SimulationsMALAVASI, Gianluca; PEDONE, Alfonso; CRISTINA MENZIANI, Maria et al.The Journal of physical chemistry. B. 2013, Vol 117, Num 15, pp 4142-4150, issn 1520-6106, 9 p.Article
Dynamic modelling of the diffusion-segregation gettering. Application to the gettering by Al in SiLUQUE, A; DEL CANIZO, C; LAGOS, R et al.Physica status solidi. A. Applied research. 1996, Vol 157, Num 1, pp 37-48, issn 0031-8965Article
Microplasma synthesis on aluminum with additions of iron and nickel soluble complexes in electrolyteROGOV, A. B; MIRONOV, I. V; TERLEEVA, O. P et al.Applied surface science. 2012, Vol 258, Num 24, pp 10028-10033, issn 0169-4332, 6 p.Article
Confirmation of aluminum-induced negative charge in thermally oxidized silicon wafers using AC surface photovoltage methodSHIMIZU, H; MUNAKATA, C.Japanese journal of applied physics. 1994, Vol 33, Num 6A, pp 3335-3338, issn 0021-4922, 1Article
Refinement of Eutectic Si Phase in Al-5Si Alloys with Yb AdditionsLI, J. H; SUETSUGU, S; TSUNEKAWA, Y et al.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2013, Vol 44, Num 2, pp 669-681, issn 1073-5623, 13 p.Article
Experimental study of the nucleation of alumina inclusions in liquid steelBESKOW, Kristina; SICHEN, Du.Scandinavian journal of metallurgy. 2003, Vol 32, Num 6, pp 320-328, issn 0371-0459, 9 p.Article
Thermal conductivity of as-cast and as-extruded binary Mg-Al alloysYING, T; ZHENG, M. Y; LI, Z. T et al.Journal of alloys and compounds. 2014, Vol 608, pp 19-24, issn 0925-8388, 6 p.Article
Role of charge doping and lattice distortions in codoped Mg1-x(AILi)xB2 compoundsMONNI, M; AFFRONTE, M; POSTORINO, P et al.Physica. C. Superconductivity. 2007, Vol 460-462, Num 1, pp 598-599, issn 0921-4534, 2 p.Conference Paper
Excellent glass-forming ability in simple Cu50Zr50-based alloysYU, P; BAI, H. Y; TANG, M. B et al.Journal of non-crystalline solids. 2005, Vol 351, Num 14-15, pp 1328-1332, issn 0022-3093, 5 p.Article
Vacancy type defects in Al implanted 4H-SiC studied by positron annihilation spectroscopySLOTTE, J; SAARINEN, K; KUZNETSOV, A. Yu et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 664-667, issn 0921-4526Conference Paper
Magnetic ordering and properties of nickel ferrite doped with Al3+ and Cr3+ ionsCHHAYA, U. V; TRIVEDI, B. S; KULKARNI, R. G et al.Journal of materials science letters. 1999, Vol 18, Num 14, pp 1177-1179, issn 0261-8028Article
Thermal EMF of equiatomic Ti-Ni alloys doped with Cr, Cu, and AlLOBODYUK, V. A; MEDYUKH, M. M.Physics of metals and metallography. 1995, Vol 80, Num 3, pp 271-276, issn 0031-918XArticle
A piezoresistive GaAs pressure sensor with GaAs/AlGaAs membrane technologyDEHE, A; FRICKE, K; MUTAMBA, K et al.Journal of micromechanics and microengineering (Print). 1995, Vol 5, Num 2, pp 139-142, issn 0960-1317Conference Paper
Unintentional incorporation of contaminants during chemical vapour deposition of silicon carbideKARMANN, S; DI CIOCCIO, L; BLANCHARD, B et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 29, Num 1-3, pp 134-137, issn 0921-5107Conference Paper
Preparation of conductive ZnO:Al films by a facing target system with a strong magnetic fieldTOMINAGA, K; KATAOKA, M; UEDA, T et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 9-13, issn 0040-6090Conference Paper
The homogeneity of the photonuclear transmutation doping of siliconZABLOTSKIY, V. V; IVANOV, N. A; LEONOV, N. N et al.Semiconductor science and technology. 1993, Vol 8, Num 12, pp 2187-2192, issn 0268-1242Article
Effect of aluminum doping on electrical and dielectric aging behavior against current impulse of ZPCCY-based varistorsNAHM, Choon-Woo.Journal of materials science. Materials in electronics. 2011, Vol 22, Num 1, pp 77-83, issn 0957-4522, 7 p.Article
Field dependence of temperature induced irreversible transformations of magnetic phases in Pr0.5Ca0.5Mn0.975Al0.025O3 crystalline oxideLAKHANI, Archana; KUSHWAHA, Pallavi; RAWAT, R et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 3, issn 0953-8984, 032101.1-032101.5Article
Critical field of Al-doped MgB2 samples : Correlation with the suppression of the σ-band gapPUTTI, M; FERDEGHINI, C; MONNI, M et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 14, pp 144505.1-144505.6, issn 1098-0121Article
Characterization and conductive coating of phosphors for improved brightnessCHANG, Chia-Hao; CHIOU, Bi-Shiou; CHEN, Kuen-Shian et al.Applied surface science. 2005, Vol 243, Num 1-4, pp 55-61, issn 0169-4332, 7 p.Article
Effect of aluminium diffusion into electrical steel on power loss under flux distortion conditionsANAYI, F; MOSES, A. J; JENKINS, K et al.Journal of magnetism and magnetic materials. 2003, Vol 254-55, pp 36-38, issn 0304-8853, 3 p.Conference Paper